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“Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices”

2023-08-24
조회수 153

Chang Wook Jeong (Seoul, KR)  Dae-Hwan Kang (Seoul, KR)  Hyeong-Jun Kim (Seoul, KR)  Jae-Min Shin (Suwon-Si, KR)  Seung-Pil Ko (Suwon-Si, KR) Assignees:  SAMSUNG ELECTRONICS CO., LTD “Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices” Samsung Electronics Co. Ltd. (US 07778079) 2010. 08.17

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Address

Dep. of Semiconductor Engineering, POSTECH 77,

Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea

(37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr



Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)

All rights reserved | Designed by greypixel


Address

Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)


TEL: +82-54-279-7085

E-mail: daehwankang@postech.ac.kr


Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel