Chalcogenide Semiconductor Lab

2006 Paper 2

2

“An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode”

2023-08-24

Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, Dong-Bok Lee, Hyun-Mi Kim, Ki-Bum Kim, and Soo-Hyun Kim “An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode” J. Appl. Phys. vol. 100, no.5 054506-1~9 (2006.9).

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1

“Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material”

2023-08-24

Byung-ki Cheong, In Ho Kim, Hanju Jung, Taek Sung Lee, Jeung-hyun Jeong, Dae-Hwan Kang, Won Mok Kim, and Jae-Geun Ha “Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material” Electronic Materials Letters vol. 2, no. 1, pp. 43 – 48 (2006).

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2 “An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode”

1 “Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material”

2

“An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode”

1

“Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material”