Chalcogenide Semiconductor Lab

2004 Paper 6

6

“Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge”

2023-08-24

Dae-Hwan Kang, Dong-Kak Lee, Ki-Bum Kim, Jung-Joong Lee, and Junghoon Joo, “Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge”, Appl. Phys. Lett. vol. 84, p. 3283 (2004).

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5

“Lower voltage operations of a phase change memory device with a highly resistive TiON layer”

2023-08-24

Dae-Hwan Kang, Dong-Ho Ahn, Min-Ho Kwon, Hyuk-Soon Kwon, Ki-Bum Kim, Kyeong Seok Lee, and Byung-ki Cheong, “Lower voltage operations of a phase change memory device with a highly resistive TiON layer”, Jpn. J. Appl. Phys. Part I vol. 43, no. 8A, p. 5243 (2004).

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4

“The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film”

2023-08-24

Hyun-Mi Kim, Sung-Soo Yim, Ki-Bum Kim, Dae-Hwan Kang, Seung-Hyun Moon, Young-Woon Kim, and Ho-Nyum Lee, “The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film”, J. Mater. Res. vol. 19, no. 2, p. 409 (2004).

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3

“Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film”

2023-08-24

Hyun-Mi Kim, Sung-Soo Yim, Ki-Bum Kim, Seung-Hyun Moon, Dae-Hwan Kang, Young-Woon Kim, and Ho-Nyum Lee, “Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film”, J. Mater. Res. vol. 19, no. 10, p. 3081 (2004).

https://link.springer.com/article/10.1557/JMR.2004.0383

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2

“Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization”

2023-08-24

Soo-Hyun Kim, Su Suk Oh, Ki-Bum Kim, Dae-Hwan Kang, Wei-Min Li, Suvi Haukka, and Marko Tuominen, “Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization ”, Journal of Electrochemical Society 151 (4), C272 (2004).

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1

“Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition”

2023-08-24

D. K. Lee, D. H. Kang, H. Y. Lee, and J. J. Lee “Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition” Surf. Coating and Technology, vol. 188 – 189, p. 440 (2004).

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6 “Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge”

5 “Lower voltage operations of a phase change memory device with a highly resistive TiON layer”

4 “The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film”

3 “Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film”

2 “Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization”

1 “Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition”

6

“Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge”

5

“Lower voltage operations of a phase change memory device with a highly resistive TiON layer”

4

“The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film”

3

“Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film”

2

“Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization”

1

“Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition”