Chalcogenide Semiconductor Lab

2003 Paper 3

3

“One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)”

2023-08-24

Dae-Hwan Kang, Dong-Ho Ahn, Ki-Bum Kim, J. F. Webb, and Kyung-Woo Yi, “One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)”, J. Appl. Phys. vol. 94, no. 5, p. 3536 (2003).

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2

“Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization”

2023-08-24

Soo-Hyun Kim, Su Suk Oh, Ki-Bum Kim, Dae-Hwan Kang, Wei-Min Li, Suvi Haukka, and Marko Tuominen, “Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization”, Appl. Phys. Lett. vol. 82, p. 4486 (2003).

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1

“Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”

2023-08-24

Soo-Hyun Kim, Ki-Tae Kim, Arindom Datta, Hyun-Mi Kim, Ki-Bum Kim, Dae-Hwan Kang, “Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”, J. Vac. Sci. Technol. vol. B 21, no. 2, p. 804 (2003).

0

3 “One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)”

2 “Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization”

1 “Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”

3

“One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)”

2

“Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization”

1

“Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films”