J.H. Oh, J.H. Park, Y.S. Lim†, H.S. Lim†, Y.T. Oh, J.S. Kim, J.M. Shin, J.H. Park, Y.J. Song, K.C. Ryoo, D.W. Lim, S.S. Park, J.I. Kim, J.H. Kim, J. Yu, F. Yeung, C.W. Jeong, J.H. Kong, D.H. Kang, G.H. Koh, G.T. Jeong, H.S. Jeong, and Kinam Kim, " Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology ", IEEE 2006 International Electron Devices Meeting (11-13 December, 2006)
Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, and Ki-Bum Kim, “Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode” IEEE Proceedings of Non-Volatile Semiconductor Memory Workshop (Feb. 12th – 16th, Monterey, CA, USA) pp. 90-91 (2006).
Address
Dep. of Semiconductor Engineering, POSTECH 77,
Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea
(37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
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Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL)
All rights reserved | Designed by greypixel
Address
Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel
