Dae-Hwan Kang, Tae-Kyun Kim, Han-Ju Jung, Taek Sung Lee, In Ho Kim, Kyeong Seok Lee, Won Mok Kim, Byung-ki Cheong, Dong-Ho Ahn, Min-Ho Kwon, Hyuk-Soon Kwon, and Ki-Bum Kim “Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4 / TiN cell structure” Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials (Sep. 15 – 17, Tokyo, Japan, 2004) pp. 644 – 645.
Address
Dep. of Semiconductor Engineering, POSTECH 77,
Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea
(37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
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Address
Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel
