Dae-Hwan Kang, Hyeon-Soo Kim, Myung-Jun Chung, Kwang-Ho Ahn, Sang-Tae Chung, Kyoung-Wook Park, Gyu-Seog Cho, Jae-Beom Park, and Yo-Hwan Koh “The Effect of Nitrogen Pre-annealing on the Sidewall Oxidation of WSix and on the Related Electrical Properties of WSix/Poly Si Gate Structure” IEEE 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA ’99 Singapore pp. 25 – 29 (1999).
Address
Dep. of Semiconductor Engineering, POSTECH 77,
Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea
(37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
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Address
Dep. of Semiconductor Engineering, POSTECH 77, Cheongam-ro, Nam-Gu, Pohang, Gyeongbuk-Do, Korea (37673)
TEL: +82-54-279-7085
E-mail: daehwankang@postech.ac.kr
Copyright ⓒ 2023. Chalcogenide Semiconductor Lab (CSL) All rights reserved | Designed by greypixel
